A new small-signal model of the dual-gate GaAs MESFET (DGFET) is described. The model does not deal with the DGFET as a cascode connection of two single-gate FET (SGFET) parts but as a four-port device. The model parameters are extracted directly from the measured s-parameters. The new small-signal model is tested on sixteen devices at many bias conditions over the frequency range 0.5-26.5 GHz. The calculated S-parameters using the new small-signal model show very good agreement with the measured data.

Additional Metadata
Keywords Admittance, Capacitors, Delay effects, Educational institutions, Electrical resistance measurement, Gallium arsenide, MESFETs, Scattering parameters, Tellurium, Voltage control
Persistent URL dx.doi.org/10.1109/ICM.2003.237825
Conference 15th International Conference on Microelectronics, ICM 2003
Citation
Ibrahim, M., Syrett, B, & Bennett, J. (2003). A new small-signal model of the dual-gate GaAs MESFET. Presented at the 15th International Conference on Microelectronics, ICM 2003. doi:10.1109/ICM.2003.237825