A new small-signal model of the dual-gate GaAs MESFET
A new small-signal model of the dual-gate GaAs MESFET (DGFET) is described. The model does not deal with the DGFET as a cascode connection of two single-gate FET (SGFET) parts but as a four-port device. The model parameters are extracted directly from the measured s-parameters. The new small-signal model is tested on sixteen devices at many bias conditions over the frequency range 0.5-26.5 GHz. The calculated S-parameters using the new small-signal model show very good agreement with the measured data.
|Keywords||Admittance, Capacitors, Delay effects, Educational institutions, Electrical resistance measurement, Gallium arsenide, MESFETs, Scattering parameters, Tellurium, Voltage control|
|Conference||15th International Conference on Microelectronics, ICM 2003|
Ibrahim, M., Syrett, B, & Bennett, J. (2003). A new small-signal model of the dual-gate GaAs MESFET. Presented at the 15th International Conference on Microelectronics, ICM 2003. doi:10.1109/ICM.2003.237825