1986
A method for contact resistivity measurement using thick, uniformly doped substrates
Publication
Publication
Solid State Electronics , Volume 29 - Issue 4 p. 461- 464
A method for measuring contact resistivity ρ{variant}c which makes use of thick, uniformly doped semiconductor samples is presented. The contacts take the form of parallel stripes which extend across the width of the sample, producing a two-dimensional current distribution. Conformal mapping is used to relate the resistance measured between the stripes to ρ{variant}c, the substrate resistivity ρ{variant}B, and the sample geometry.
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| doi.org/10.1016/0038-1101(86)90093-6 | |
| Solid State Electronics | |
| Organisation | Department of Electronics |
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Winterton, S.S., & Tarr, N.G. (1986). A method for contact resistivity measurement using thick, uniformly doped substrates. Solid State Electronics, 29(4), 461–464. doi:10.1016/0038-1101(86)90093-6
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