A method for measuring contact resistivity ρ{variant}c which makes use of thick, uniformly doped semiconductor samples is presented. The contacts take the form of parallel stripes which extend across the width of the sample, producing a two-dimensional current distribution. Conformal mapping is used to relate the resistance measured between the stripes to ρ{variant}c, the substrate resistivity ρ{variant}B, and the sample geometry.

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Persistent URL dx.doi.org/10.1016/0038-1101(86)90093-6
Journal Solid State Electronics
Winterton, S.S., & Tarr, N.G. (1986). A method for contact resistivity measurement using thick, uniformly doped substrates. Solid State Electronics, 29(4), 461–464. doi:10.1016/0038-1101(86)90093-6