Palladium on n-type silicon Schottky barrier photodetectors have been integrated with SOI optical waveguides. The diodes gave optical responsivity of 330 nA/mW at 1310 nm. Dark current density is less than 2×10-8 Acm-2 at 1 volt reverse bias.

Additional Metadata
Keywords Integrated photodetector, palladium (Pd), Schottky diode, SOI waveguide
Persistent URL dx.doi.org/10.1109/Group4.2015.7305975
Conference 12th IEEE International Conference on Group IV Photonics, GFP 2015
Citation
Li, S. (Shuxia), Tarr, N.G, Ye, W.N, & Berini, P. (Pierre). (2015). Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides. Presented at the 12th IEEE International Conference on Group IV Photonics, GFP 2015. doi:10.1109/Group4.2015.7305975